3X3 DFN
Model：FKCA1030、FKCA2030、FKCA3214
If you have any question about product specification, Pls don’t hesitate to contact us. Thanks!
Add to inquiry
Specification
| FKCA1030 | 12V RDS=4.3mΩ |
| FKCA2030 | 20V RDS=5.8Ω |
| FKCA3214 | 30V RDS=15mΩ |
GENERAL DESCRIPTION
It is a N-Channel enhancement mode power field effect transistor,using Force-MOS patented Extended Trench Gate(ETG) technology.
This advanced technology is especially tailored to minimize on state resistance and gate charge, and enhance avalanche capability.
These devices are particularly suited for medium voltage application such as charger, adapter, notebook computer power management and other lighting dimming powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.