PRPAK3x3
Model：FKBB3072、FKBB3214、FKBB3115E、FKBB3909
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Specification
| FKBB3072 | 30V Single N RDS=2.4mΩ |
| FKBB3214 | 30V Dual N RDS=14mΩ |
| FKBB3115E | -30V Single P RDS=8.5mΩ |
| FKBB3909 | 30V N+P RDS=20mΩ |
GENERAL DESCRIPTION
It is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.