SOP-8
Model：FKS3018B、FKS3031、FKS3206、FKS3305、FKS3905
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Specification
| FKS3018B | 30V Single N RDS=3mΩ |
| FKS3031 | -30V Single P RDS=7mΩ |
| FKS3206 | 30V Dual N RDS=6mΩ |
| FKS3305 | -30V Dual P RDS=16mΩ |
| FKS3905 | 30V N+P RDS=12mΩ |
GENERAL DESCRIPTION
It is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES / APPLICATIONS
FEATURES
• RDS(ON) ≦26.5mΩ@VGS=10V (N-Ch)
• RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch) .
• RDS(ON) ≦44mΩ@VGS=-10V (P-Ch)
• RDS(ON) ≦60mΩ@VGS=-4.5V(P-Ch)
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
APPLICATIONS
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• LCD Display inverter