SOT-23
Model：FKN3502、FKN3103
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Specification
| FKN3502 | 30V Single N RDS=27mΩ |
| FKN3103 | -30V Single P RDS=32mΩ |
GENERAL DESCRIPTION
IT is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES / APPLICATIONS
FEATURES
RDS(ON) ≦2.8Ω@VGS=10V
RDS(ON) ≦3.8Ω@VGS=4.5V
ESD Protection HBM≧2KV
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Capable doing Cu wire bonding
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC