TO252-4
Model：FKBA3901、FKBA3903、FKBA4903、FKD6901、FKD6903
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Specification
| FKBA3901 | 30V RDS=27mΩ |
| FKBA3903 | 30V RDS=18mΩ |
| FKBA4903 | 40V RDS=28mΩ |
| FKD6901 | 60V RDS=32mΩ |
| FKD6903 | 60V RDS=40mΩ |
GENERAL DESCRIPTION
It is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package